| PART |
Description |
Maker |
| MAX2753 MAX2753EUA |
" 2.4GHz, Monolithic Voltage-Controlled Oscillator with Differential Outputs"
2.4GHz Monolithic Voltage-Controlled Oscillator with Differential Outputs
|
MAXIM[Maxim Integrated Products]
|
| LT3651-4.1 LT3651IUHE-4.2PBF |
Monolithic 4A High Voltage Monolithic 4A High Voltage
BATTERY CHARGE CONTROLLER, 1100 kHz SWITCHING FREQ-MAX, PQCC36
|
LINEAR TECHNOLOGY CORP
|
| R414720000 |
ATTENUATOR, N 2W 20DB 12.4GHZATTENUATOR, N 2W 20DB 12.4GHZ; Impedance:50R; Attenuation:20dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
| 6240-99-995-1170 6240-99-995-1183 6240-99-995-1232 |
LAMP BA9S 6.5V 2W
LAMP MES 24V 2.8W
Precision, Low-Power, 6-Pin SOT23 Temperature Sensors and Voltage References
LAMP BA9S 24V 2.9W 灯BA9S 24V2.9W
FILAMENT LAMP 12V 183MA 白炽2V83MA
High-Slope, Low-Power, Analog Temperature Sensor in an SC70 Package 灯MES4V的为1.2W
CMOS Monolithic Voltage Converter 12V.2W的灯BA9S
CMOS Monolithic Voltage Converter MES.5VW的灯
|
Electronic Theatre Controls, Inc.
Dialight PLC
Molex, Inc.
ITT, Corp.
|
| LB1846MC |
Monolithic Digital IC Low-Voltage/Low Saturation Voltage Type Bidirectional Motor Driver
|
Sanyo Semicon Device
|
| MGFC39V5964A C395964A MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SE2522BL |
RangeCharger 2.4GHz 23 dBm Power Amplifier Preliminary Information
RangeCharger⑩ 2.4GHz 23 dBm Power Amplifier Preliminary Information
|
SiGe Semiconductor, Inc.
|
| VI7660 |
Monolithic Voltage Converter
|
Datel
|
| ECN3021 |
High Voltage Monolithic IC
|
Hitachi
|
| ILC6660IK |
CMOS MONOLITHIC VOLTAGE CONVERTER
|
Impala Linear Corporation
|
| ECN30601SP ECN30601SPR ECN30601SPV ECN30601 |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| MGFC40V5964A C405964A |
5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
